The Development History of Silicon Carbide

Silicon carbide is a type of carbide that was accidentally discovered by American Acheson in the laboratory during the electric melting diamond experiment in 1891. At that time, it was mistakenly believed to be a mixture of diamonds, so it was named diamond sand. In 1893, Acheson developed a method for industrial smelting silicon carbide, commonly known as the Acheson furnace, which has been used to this day, using carbon materials as the furnace core, Electrically heating a mixture of quartz SiO2 and carbon generates silicon carbide.

Several events related to silicon carbide
In 1905, silicon carbide was first discovered in meteorites.
The first silicon carbide crystal light emitting diode was born in 1907.
In 1955, with a significant breakthrough in theory and technology, LELY proposed the concept of growing high-quality carbonization, and since then, SiC has been regarded as an important electronic material.
In 1958, the First World Silicon Carbide Conference was held in Boston for academic exchange.
In the 1960s and 1970s, silicon carbide was mainly studied by the former Soviet Union. By 1978, the first grain purification and growth method using the "LELY improvement technology" was adopted.
From 1987 to present, CREE has established a silicon carbide production line based on its research results, and suppliers have begun to provide commercialized silicon carbide based products.